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AO4710
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary
VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8mΩ (VGS = 10V) RDS(ON) < 14.2mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.