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AO4712 - N-Channel Enhancement Mode Field Effect Transistor

General Description

SRFET The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Key Features

  • VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G www. DataSheet4U. com D D D D G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B Avalanche Current B Maximum 30 ±12 11.2 9.1 60 16 38 3.1 2.0 -55 to 150 Units V V A TA=2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4712 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G www.DataSheet4U.