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AO4718 - N-Channel MOSFET

General Description

SRFET TM The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Key Features

  • VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Avalanche energy L=0.3mH B VGS IDSM IDM IAS, IAR EAS, EAR Power Dissipation TA=25°C TA=70°C PD Junction a.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description SRFET TM The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4718 30V N-Channel MOSFET SRFET TM Features VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Avalanche energy L=0.