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AO6401A - P-Channel MOSFET

Datasheet Summary

Description

The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and www.DataSheet4U.com operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

AO6401A is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Power Dissipation A B Units V V VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 1.6 1.0 -5 -3.7 ±12 -3.7 -3.2 -25 1.0 0.7 -55 to 150.

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Datasheet preview – AO6401A

Datasheet Details

Part number AO6401A
Manufacturer Alpha & Omega Semiconductors
File Size 804.27 KB
Description P-Channel MOSFET
Datasheet download datasheet AO6401A Datasheet
Additional preview pages of the AO6401A datasheet.

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Full PDF Text Transcription

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AO6401A P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and www.DataSheet4U.com operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6401A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.
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