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AO6409L - P-Channel MOSFET

Download the AO6409L datasheet PDF. This datasheet also covers the AO6409 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Key Features

  • VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www. DataSheet4U. com S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -5.0 -4.2 -30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO6409_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Rev 2: Nov 2004 AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www.DataSheet4U.