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AO6801 - Dual P-Channel MOSFET

General Description

The AO6801 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM www.DataSheet4U.com applications.

Standard Product AO6801 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = -30V ID = -2.3 A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±12 -2.3 -1.8 -20 1.15 0.73 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ,.

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AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO6801 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM www.DataSheet4U.com applications. Standard Product AO6801 is Pb-free (meets ROHS & Sony 259 specifications). AO6801L is a Green Product ordering option. AO6801 and AO6801L are electrically identical. Features VDS (V) = -30V ID = -2.3 A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.