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AO6801A - 30V Dual P-Channel MOSFET

General Description

The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO6801A 30V Dual P-Channel MOSFET General Description The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -30V -2.3A < 115mΩ < 150mΩ < 200mΩ TSOP6 Top View Bottom View D1 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -2.3 -2 -11 1.15 0.