Datasheet4U Logo Datasheet4U.com

AO6801A - 30V Dual P-Channel MOSFET

Datasheet Summary

Description

The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

📥 Download Datasheet

Datasheet preview – AO6801A

Datasheet Details

Part number AO6801A
Manufacturer Alpha & Omega Semiconductors
File Size 327.31 KB
Description 30V Dual P-Channel MOSFET
Datasheet download datasheet AO6801A Datasheet
Additional preview pages of the AO6801A datasheet.

📁 Similar Datasheet

  • AO6801A - Dual P-Channel MOSFET (Kexin)
  • AO6801A - Dual P-Channel 20V MOSFET (VBsemi)
  • AO6801 - Dual P-Channel MOSFET (VBsemi)
  • AO6800 - Dual N-Channel MOSFET (VBsemi)
  • AO6800-HF - Dual N-Channel MOSFET (Kexin)
  • AO6802 - N-Channel MOSFET (Freescale)
  • AO6804A - Dual N-Channel MOSFET (Kexin)
  • AO6403 - P-Channel MOSFET (VBsemi)
  • AO6409A - P-Channel MOSFET (VBsemi)
  • AO6601 - N- and P-Channel 20V MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors
  • AO6801 - Dual P-Channel MOSFET
  • AO6800 - 30V Dual N-Channel MOSFET
  • AO6802 - 30V Dual N-Channel MOSFET
  • AO6804 - Dual N-Channel MOSFET
  • AO6804A - 20V Dual N-Channel MOSFET
  • AO6808 - Dual N-Channel MOSFET
  • AO6810 - Dual N-Channel MOSFET
  • AO6400 - 30V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
AO6801A 30V Dual P-Channel MOSFET General Description The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -30V -2.3A < 115mΩ < 150mΩ < 200mΩ TSOP6 Top View Bottom View D1 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -2.3 -2 -11 1.15 0.
Published: |