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AO9926E - Dual N-Channel MOSFET

Description

The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = 20V ID = 8A (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 8 6.4 30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM P.

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📁 Similar Datasheet

Part Number Description Manufacturer
AO9926 Dual N-Channel MOSFET Alpha Industries
AO9926A Dual N-Channel MOSFET ETC

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO9926B 20V Dual N-Channel MOSFET

Full PDF Text Transcription

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AO9926E Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROHS & Sony 259 specifications). AO9926EL is a Green Product ordering option. AO9926E and AO9926EL are Features VDS (V) = 20V ID = 8A (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.
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