Datasheet Details
| Part number | AOB262L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 333.47 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 AOB262L Datasheet
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| Part number | AOB262L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 333.47 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
AOB262L Datasheet
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 6V) 60V 140A < 3.0mΩ < 3.2mΩ (< 2.8mΩ∗) (< 3.0mΩ∗) Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO-220 Bottom View D D TO-263 D2PAK D Top View Bottom View D D G DS Orderable Part Number AOT262L AOB262L S DG Package Type TO-220 TO-263 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR VDS Spike 10µs VSPIKE Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC S G Form Tube Tape & Reel Maximum 60 ±20 140 110 500 20 16 115 661 72 8 333 167 2.1 1.3 -55 to 175 G G S S Minimum Order Quantity 1000 800 Units V V A A A mJ V V/ns W W °C Typ Max 12 15 48 60 0.35 0.45 Units °C/W °C/W °C/W Rev.1.0 : August 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=250µA, VGS=0V 60 V VDS=60V, VGS=0V TJ=55°C 1 µA 5 VDS=0V, VGS= ±20V 100
AOT262L/AOB262L 60V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOB262L | N-Channel MOSFET | INCHANGE |
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