Datasheet Details
| Part number | AOB264L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 421.75 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 AOB264L Datasheet
|
|
|
| Part number | AOB264L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 421.75 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
AOB264L Datasheet
|
|
|
|
The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 6V) 100% UIS Tested 100% Rg Tested 60V 140A < 3.2mW < 3.5mW (< 3.0mW*) (< 3.3mW*) Top View TO220 Bottom View Top View TO-263 D2PAK Bottom View D D D D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 60 ±20 140 110 480 19 15 100 500 333 167 2.1 1.3 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 48 0.35 Max 15 60 0.45 * Surface mount package TO263 D G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.1: June 2024 www.aosmd.com Page 1 of 6 AOT264L/AOB264L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=250mA, VGS=0V 60 V VDS=60V, VGS=0V TJ=55°C 1 mA 5 VDS=0V, VGS= ±20V 100 nA VDS=VGS ID=250mA 2.2 2.7 3.2 V VGS=10V, VDS=5V 480 A VGS=10V, ID=20A 2.4 3.2 TO220 TJ=125°C 4 4.8 RDS(ON) Static Drain-Source On-Re
AOT264L/AOB264L 60V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOB264L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOB2606L | 60V N-Channel MOSFET |
| AOB2608L | 60V N-Channel MOSFET |
| AOB260L | 60V N-Channel MOSFET |
| AOB2618L | 60V N-Channel MOSFET |
| AOB262L | 60V N-Channel MOSFET |
| AOB266L | 60V N-Channel MOSFET |
| AOB20B65M1 | IGBT |
| AOB20S60 | Power Transistor |
| AOB20S60L | Power Transistor |
| AOB210L | 30V N-Channel MOSFET |