Datasheet4U Logo Datasheet4U.com

AOB4184 - 40V N-Channel MOSFET

Datasheet Summary

Description

The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications.

Features

  • VDS (V) =40V ID = 50 A RDS(ON) < 10 mΩ RDS(ON) < 13 mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested TO-263 Top View D2PAK Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current A Avalanche Current C TC=25°C TC=70°C Avalanche energy L=100uH C IDSM IAS, I.

📥 Download Datasheet

Datasheet preview – AOB4184

Datasheet Details

Part number AOB4184
Manufacturer Alpha & Omega Semiconductors
File Size 307.10 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet AOB4184 Datasheet
Additional preview pages of the AOB4184 datasheet.

📁 Similar Datasheet

  • AOB4184 - N-Channel MOSFET (INCHANGE)
  • AOB418L - N-Channel MOSFET (INCHANGE)
  • AOB410L - N-Channel MOSFET (INCHANGE)
  • AOB411L - P-Channel MOSFET (INCHANGE)
  • AOB412L - N-Channel MOSFET (INCHANGE)
  • AOB414 - Power MOSFET (VBsemi)
  • AOB416 - N-Channel MOSFET (INCHANGE)
  • AOB409L - P-Channel MOSFET (INCHANGE)
  • AOB42S60 - N-Channel MOSFET (INCHANGE)
  • AOB440 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOB4184 40V N-Channel MOSFET General Description The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Features VDS (V) =40V ID = 50 A RDS(ON) < 10 mΩ RDS(ON) < 13 mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.
Published: |