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AOB420 - N-Channel MOSFET

Datasheet Summary

Description

The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

AOB420L (Green Product) is offered in a Lead Free package.

Features

  • VDS (V) = 30V ID = 110A RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.0mΩ (VGS = 4.5V) TO-263 D2-PAK Top View Drain Connected to Tab GD S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G TC=100°C B VGS ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C.

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Datasheet preview – AOB420

Datasheet Details

Part number AOB420
Manufacturer Alpha & Omega Semiconductors
File Size 300.73 KB
Description N-Channel MOSFET
Datasheet download datasheet AOB420 Datasheet
Additional preview pages of the AOB420 datasheet.

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Full PDF Text Transcription

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Rev 2: Oct 2004 AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package. Features VDS (V) = 30V ID = 110A RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.0mΩ (VGS = 4.5V) TO-263 D2-PAK Top View Drain Connected to Tab GD S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G TC=100°C B VGS ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
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