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AOCR33105E - 12V Common-Drain Dual N-Channel MOSFET

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Description

Trench Power MOSFET technology Ultra low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS 2.0 and Halogen-Free Compliant Applications Battery protection switch

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Datasheet Details

Part number AOCR33105E
Manufacturer Alpha & Omega Semiconductors
File Size 772.79 KB
Description 12V Common-Drain Dual N-Channel MOSFET
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AOCR33105E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS 2.0 and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 3mΩ < 3.4mΩ < 4.2mΩ < 5.8mΩ HBM Class 2 MRigidCSPTM 2.08x1.
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