Datasheet Details
| Part number | AOCR33105E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 772.79 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOCR33105E-AlphaOmegaSemiconductors.pdf |
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Overview: AOCR33105E 12V Common-Drain Dual N-Channel MOSFET General.
| Part number | AOCR33105E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 772.79 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOCR33105E-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MOSFET technology • Ultra low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS 2.0 and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 3mΩ < 3.4mΩ < 4.2mΩ < 5.8mΩ HBM Class 2 MRigidCSPTM 2.08x1.45_10 Top View Bottom View Top View 86 97 10 5 24 G1 G2 13 Pin1 Pin1 1,2,3,4 : Source1(FET1) 6,7,8,9 : Source2(FET2) 5: Gate1(FET1) 10: Gate2(FET2) S1 (FET1) S2 (FET2) Orderable Part Number AOCR33105E Package Type MRigidCSPTM 2.08x1.45_10 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 TA=25°C Power Dissipation Note1 TA=25°C Junction and Storage Temperature Range VSS VGS IS ISM PD TJ, TSTG Rating 12 ±8 30 100 3.1 -55 to 150 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA Note 1.
Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.
Note 2.
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