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AOCR35105E Datasheet 12v Common-drain Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOCR35105E 12V Common-Drain Dual N-Channel MOSFET MRigidCSP TM.

General Description

• Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve battery performance and _.safety • Common drain configuration for design simplicity • RoHS 2.0 and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 2.5mΩ < 2.8mΩ < 3.5mΩ < 4.9mΩ HBM Class 2 MRigidCSPTM 2.08x1.45_10 Top View Bottom View Pin1 Top View 86 97 10 5 PIN1 24 G1 13 Pin1 1,2,3,4 : Source1(FET1) 6,7,8,9 : Source2(FET2) 5: Gate1(FET1) 10: Gate2(FET2) G2 S1 (FET1) S2 (FET2) Orderable Part Number AOCR35105E Package Type MRigidCSPTM2.08x1.45_10 Form Tape & Reel Minimum Order Quantity 6000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 25 100 2.3 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typical Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA 40 45 Note 1.

Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.

Note 2.

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