Datasheet4U Logo Datasheet4U.com

AOD4187 - P-Channel MOSFET

Datasheet Summary

Features

  • The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load.

📥 Download Datasheet

Datasheet preview – AOD4187

Datasheet Details

Part number AOD4187
Manufacturer Alpha & Omega Semiconductors
File Size 166.61 KB
Description P-Channel MOSFET
Datasheet download datasheet AOD4187 Datasheet
Additional preview pages of the AOD4187 datasheet.

📁 Similar Datasheet

  • AOD418 - N-Channel MOSFET (INCHANGE)
  • AOD4180 - N-Channel MOSFET (INCHANGE)
  • AOD4182 - N-Channel MOSFET (INCHANGE)
  • AOD4184 - N-Channel MOSFET (INCHANGE)
  • AOD4184 - N-Channel MOSFET (VBsemi)
  • AOD4184A - N-Channel MOSFET (INCHANGE)
  • AOD4185 - P-Channel MOSFET (INCHANGE)
  • AOD4185 - P-Channel MOSFET (VBsemi)
  • AOD4186 - N-Channel MOSFET (INCHANGE)
  • AOD4186 - N-Channel 40V MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOD4187 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications VDS (V) = -40V ID = -45A RDS(ON) < 17mΩ RDS(ON) < 23mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.
Published: |