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AOD4189 - P-Channel MOSFET

General Description

The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

TO-252 D-PAK

Key Features

  • VDS (V) = -40V ID = -40A (V GS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 29mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S G S G S Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Avalanche Current C C C Maximum -40 ±20 -40 -28 -50 -35 61 62.5 31 2.5 1.6 -55 to 175 Units V V VGS TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG A Repet.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* TO-252 D-PAK Features VDS (V) = -40V ID = -40A (V GS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 29mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S G S G S Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Avalanche Current C C C Maximum -40 ±20 -40 -28 -50 -35 61 62.5 31 2.5 1.