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AOD4185 - 40V P-Channel MOSFET

General Description

The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications.

Key Features

  • es VDS (V) = -40V ID = -40A RDS(ON) < 15mW RDS(ON) < 20mW (VGS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO252 DPAK Bottom View D Top View D TO-251A IPAK Bottom View D S G G S G DS G G SD Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,H TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy.

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AOD4185/AOI4185 40V P-Channel MOSFET General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free* Features VDS (V) = -40V ID = -40A RDS(ON) < 15mW RDS(ON) < 20mW (VGS = -10V) (VGS = -10V) (VGS = -4.