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AOD425 - P-Channel MOSFET

Datasheet Summary

Description

The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

The device is ESD protected.

Features

  • es VDS (V) = -30V ID = -40A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 35mΩ (VGS = -5V) ESD Protected! 100% Rg Tested! TO-252 Top View D-PAK Bottom View D D G S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain TC=25°C -40 Current F TC=100°C ID -30 Pulsed Drain Current C IDM -70 Continuous Drain TA=25°C Current TA=70°C IDSM -9 -7 TC=25°C Powe.

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Datasheet Details

Part number AOD425
Manufacturer Alpha & Omega Semiconductors
File Size 132.12 KB
Description P-Channel MOSFET
Datasheet download datasheet AOD425 Datasheet
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Full PDF Text Transcription

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AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected.
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