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AOD476 - N-Channel MOSFET

General Description

The AOD476 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

TO-252 D-PAK

Key Features

  • 1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON).

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Full PDF Text Transcription for AOD476 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOD476. For precise diagrams, and layout, please refer to the original PDF.

AOD476 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD476 uses advanced trench technology and design to provide excellent RDS(ON) with low ...

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ed trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free* TO-252 D-PAK Features 1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <21 mΩ (VGS = 10V) RDS(ON) <28 mΩ (VGS = 4.5V) RDS(ON) <79 mΩ (VGS = 2.5V) 193 100% UIS Tested! 18 100% Rg Tested! D Top View D Bottom View G S S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.

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