Datasheet Details
| Part number | AOGF60B65H2AL |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 555.26 KB |
| Description | 650V 60A AlphaIGBT |
| Datasheet |
 AOGF60B65H2AL Datasheet
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| Part number | AOGF60B65H2AL |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 555.26 KB |
| Description | 650V 60A AlphaIGBT |
| Datasheet |
AOGF60B65H2AL Datasheet
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• Latest AlphaIGBT (αIGBT) Technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 60A 1.95V Applications • Power factor correction • Very high switching frequency applications TO3PF C AOGF60B65H2AL E C G G E Orderable Part Number Package Type AOGF60B65H2AL TO3PF Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage VCE Gate-Emitter Voltage Continuous Collector TC=25°C Current TC=100°C VGE IC Pulsed Collector Current, Limited by TJmax Turn-Off SOA, VCE≤650V, Limited by TJmax Continuous Diode TC=25°C Forward Current TC=100°C ICM ILM IF Diode Pulsed Current, Limited by TJmax Power Dissipation TC=25°C TC=100°C IFM PD Junction and Storage Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering Purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case RqJA RqJC Maximum Diode Junction-to-Case RqJC (1) TO3PF IC,IF follows TO247.
Form Tube Minimum Order Quantity 480 AOGF60B65H2AL 650 ±30 120(2) 60(2) 180 180 60(2) 30(2) 90 74 29 -55 to 150 300 Units V V A A A A A W °C °C AOGF60B65H2AL 30 1.7 2.5 Units °C/W °C/W °C/W Rev.1.0 February 2020 www.aosmd.com Page 1 of 8 AOGF60B65H2AL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVCES Collector-Emitter Breakdown Voltage VCE(sat) Collector-Emitter Saturation Voltage VF Diode Forward Voltage VGE(th) Gate-Emitter Threshold Voltage ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current gFS Forward Transconductance IC
AOGF60B65H2AL 650V, 60A AlphaIGBT TM With Soft and Fast Recovery Anti-Parallel Diode.
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