Datasheet Details
| Part number | AOGT66909 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 577.34 KB |
| Description | 100V N-Channel Power MOSFET |
| Datasheet |
 AOGT66909 Datasheet
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| Part number | AOGT66909 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 577.34 KB |
| Description | 100V N-Channel Power MOSFET |
| Datasheet |
AOGT66909 Datasheet
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• AlphaSGTTM N-Channel Power MOSFET • Low RDS(ON) • Low Thermal Resistance • Top Cooling • Standard Level Gate Threshold • RoHS 2.0 and Halogen-Free Compliant Applications • Motor Driver • Battery Manangement Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 100V 366A < 1.5mΩ < 1.7mΩ GTPAKTM Top View D Top View Bottom View PIN1 PIN1 D G S Orderable Part Number AOGT66909 Package Type GTPAKTM Form Minimum Order Quantity Tape & Reel 1800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 366 258 1464 56 46 90 405 428 214 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 32 0.25 Max 15 40 0.35 Units °C/W °C/W °C/W Rev.1.0: November 2024 www.aosmd.com Page 1 of 6 AOGT66909 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARA
AOGT66909 100V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AOGF60B65H2AL | 650V 60A AlphaIGBT |
| AOGL66901 | 100V N-Channel AlphaSGT |