Datasheet Details
| Part number | AOGL66901 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 389.78 KB |
| Description | 100V N-Channel AlphaSGT |
| Datasheet |
 AOGL66901 Datasheet
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| Part number | AOGL66901 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 389.78 KB |
| Description | 100V N-Channel AlphaSGT |
| Datasheet |
AOGL66901 Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • High Current Capability • Robust Gullwing Package • RoHS 2.0 and Halogen-Free Compliant Applications • BLDC • Battery Management Systems AOGL66901 100V N-Channel AlphaSGT TM Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 100V 448A < 1.25mΩ < 1.4mΩ D G S Orderable Part Number AOGL66901 Package Type GLPAK Form Minimum Order Quantity Tape & Reel 1800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 448 316 1790 75 62 100 500 535 267 15 10.5 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 7 28 0.18 Max 10 35 0.28 Units °C/W °C/W °C/W Rev 1.0: June 2024 www.aosmd.com Page 1 of 6 AOGL66901 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 Zero Gate Voltage Drain Current Gate-Body leakage current VDS=100V, VGS=0V VDS=0V, VGS=±20V TJ=55°C Gate Threshold Voltage VDS=VGS, ID=250mA 2.3 VGS=10V, ID=20A Static Drain-Source On-Resistance VGS=8V, ID=20A TJ=125°C Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Ca
General.
| Part Number | Description |
|---|---|
| AOGF60B65H2AL | 650V 60A AlphaIGBT |
| AOGT66909 | 100V N-Channel Power MOSFET |