Datasheet Details
| Part number | AOI4T60P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 494.40 KB |
| Description | 4A N-Channel MOSFET |
| Download | AOI4T60P Download (PDF) |
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| Part number | AOI4T60P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 494.40 KB |
| Description | 4A N-Channel MOSFET |
| Download | AOI4T60P Download (PDF) |
|
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• Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested 700V 16A < 2.1Ω 8.3nC 1.6µJ TO-252 TO-251A DPAK IPAK D Top View Bottom View Top View Bottom View D D S G AOD4T60P Orderable Part Number AOD4T60P AOI4T60P G S S GD G SD AOI4T60P Package Type TO-252 TO-251A Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 4 2.4 16 4 8 203 50 5 83 0.7 -55 to 150 300 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 40 1.25 Maximum 50 0.5 1.5 Units °C/W °C/W °C/W Rev.1.0: May 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 600 BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, V
AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOI4T60P | N-Channel MOSFET | INCHANGE |
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AOI4T60 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOI4T60 | 4A N-Channel MOSFET |
| AOI403 | 30V P-Channel MOSFET |
| AOI409 | 60V P-Channel MOSFET |
| AOI4102 | 30V N-Channel MOSFET |
| AOI4126 | 100V N-Channel MOSFET |
| AOI4130 | 60V N-Channel MOSFET |
| AOI4146 | 30V N-Channel MOSFET |
| AOI418 | 30V N-Channel MOSFET |
| AOI4184 | 40V N-Channel MOSFET |
| AOI4185 | 40V P-Channel MOSFET |