Datasheet Details
| Part number | AOK30B60D1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 699.18 KB |
| Description | 30A Alpha IGBT |
| Datasheet |
 AOK30B60D1 Datasheet
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| Part number | AOK30B60D1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 699.18 KB |
| Description | 30A Alpha IGBT |
| Datasheet |
AOK30B60D1 Datasheet
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Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations.The soft copackaged diode is targeted for minimal losses in Welding machines, Solar Inverter and UPS applications.
VCE IC (TC=100°C) VCE(sat) (TC=25°C) 600V 30A 1.85V Top View TO-247 C AOK30B60D1 E C G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE VGE Spike 500ns VSPIKE Continuous Collector TC=25°C Current TC=100°C IC Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM Continuous Diode Forward Current TC=25°C TC=100°C IF Diode Pulsed Current, Limited by TJmax I FM Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, t SC TC=25°C Power Dissipation TC=25°C TC=100°C PD Junction and Storage Temperature Range T J , T STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case R θ JA R θ JC Maximum Diode Junction-to-Case R θ JC G AOK30B60D1 600 ±20 24 60 30 96 96 30 15 96 10 208 83 -55 to 150 300 AOK30B60D1 40 0.6 1.7 E Units V V V A A A A A µs W °C °C Units °C/W °C/W °C/W Rev.3.0: Nov 2013 www.aosmd.com Page 1 of 9 AOK30B60D1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) Collector-Emitter Saturation Voltage VF Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage IC=1mA, VGE=0V, TJ=25°C TJ=25°C VGE=15V, IC=26A TJ=125°C TJ=150°C TJ=25°C VGE=0V, IC=15A TJ=125°C
AOK30B60D1 600V, 30A Alpha IGBT TM with Diode General.
| Part Number | Description |
|---|---|
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| AOK065A60FD | 600V N-Channel Power Transistor |
| AOK065V120X2 | Silicon Carbide Power MOSFET |
| AOK065V65X2 | Power MOSFET |
| AOK095A60 | 600V N-Channel Power Transistor |
| AOK095A60FD | 600V N-Channel Power Transistor |
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