Datasheet Details
| Part number | AOL1240 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 259.87 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOL1240-AlphaOmegaSemiconductors.pdf |
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Overview: AOL1240 40V N-Channel MOSFET General.
| Part number | AOL1240 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 259.87 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOL1240-AlphaOmegaSemiconductors.pdf |
|
|
|
The AOL1240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 100% UIS Tested 100% Rg Tested 40V 69A < 3mΩ < 4.4mΩ UltraSO-8TM Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 69 54 400 19 15 65 211 125 62.5 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 50 1 Max 25 60 1.2 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: Sep.
2011 www.aosmd.com Page 1 of 6 AOL1240 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=40V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125
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