Datasheet Details
| Part number | AOL1242 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.28 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOL1242-AlphaOmegaSemiconductors.pdf |
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Overview: AOL1242 40V N-Channel MOSFET General.
| Part number | AOL1242 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.28 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOL1242-AlphaOmegaSemiconductors.pdf |
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The AOL1242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 69A < 5.2mΩ < 7.9mΩ UltraSO-8TM Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 69 54 205 14 11 40 80 68 34 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 50 1.8 Max 25 60 2.2 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: July 2011 www.aosmd.com Page 1 of 6 AOL1242 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA 1.3 1.8 2.3 V ID(ON) On state drain current VGS=10V, VDS=5V 205 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4.2 5.2 mΩ 6.9 8.5 VGS=4.5V, ID=20A 6.1 7.9 mΩ gFS Forward Transconductance VDS=5V,
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