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AOM040V120X2Q 1200 V αSiC Silicon Carbide Power MOSFET
Features
• Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Flexible gate voltage range (VGS = 15 to 18 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified
Applications
• xEV Charger • Electric Vehicle Supply Equipment (EVSE) • Motor Drives • Automotive Inverters
Pin Configuration
Top View
Product Summary
VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 800 V 100% UIS Tested
1200 V 100 A 40 mΩ 143 nC 44 µJ
D
Bottom View
(1)
(1) (2)(3)(4)
Ordering Part Number AOM040V120X2Q
Package Type TO-247-4L
Form Tube
Absolute Maximum Ratings
(TA = 25°C, unless otherwise noted)
Symbol VDS VGS,OP,TRANS VGS,OP
ID
IDM EAS PD
Parameter
Drain-Source Voltage
Gate S
AOM040V120X2Q Datasheet
