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AON1606
20V N-Channel MOSFET
General Description
The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications.
Product Summary
VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V)
Typical ESD protection
20V 0.7A < 275mW < 335mW < 390mW
HBM Class 1C
DFN 1.0x0.6
Top View
Bottom View
G S
D
D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current E
TA=25°C TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±8 0.7 0.55 2.8 0.9 0.