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AON1606 - 20V N-Channel MOSFET

General Description

The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package.

This device is ideal for load switch applications.

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AON1606 20V N-Channel MOSFET General Description The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V) Typical ESD protection 20V 0.7A < 275mW < 335mW < 390mW HBM Class 1C DFN 1.0x0.6 Top View Bottom View G S D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current E TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 0.7 0.55 2.8 0.9 0.