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AON1605
20V P-Channel MOSFET
General Description
The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications.
Product Summary
VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -0.7A < 710mΩ < 930mΩ < 1250mΩ
Typical ESD protection
HBM Class 1C
DFN 1.0x0.6 Top View Bottom View G S D G
D
D
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S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current E Pulsed Drain Current Power Dissipation A
C
Maximum -20 ±8 -0.7 -0.55 -2 0.9 0.