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AON1605 - 20V P-Channel MOSFET

General Description

The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package.

This device is ideal for load switch applications.

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AON1605 20V P-Channel MOSFET General Description The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -0.7A < 710mΩ < 930mΩ < 1250mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6 Top View Bottom View G S D G D D http://www.DataSheet4U.net/ S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current E Pulsed Drain Current Power Dissipation A C Maximum -20 ±8 -0.7 -0.55 -2 0.9 0.