Datasheet Details
| Part number | AON1605 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.64 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON1605_AlphaOmegaSemiconductors.pdf |
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Overview: AON1605 20V P-Channel MOSFET General.
| Part number | AON1605 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.64 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON1605_AlphaOmegaSemiconductors.pdf |
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The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package.
This device is ideal for load switch applications.
Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -0.7A < 710mΩ < 930mΩ < 1250mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6 Top View Bottom View G S D G D D http://..net/ S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current E Pulsed Drain Current Power Dissipation A C Maximum -20 ±8 -0.7 -0.55 -2 0.9 0.55 -55 to 150 Units V V A A W ° C VGS C TA=25° TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State RθJA RθJA Typ 80 110 200 280 Max 100 140 245 340 Units ° C/W ° C/W ° C/W ° C/W Rev 0 : Oct.
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