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AON1611 Datasheet P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON1611 20V P-Channel MOSFET General.

General Description

Product Summary The AON1611 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) Typical ESD protection -20V -4A < 58mΩ < 76mΩ < 98mΩ < 120mΩ HBM Class 2 DFN 1.6x1.6A Top View Bottom View S S D G Pin 1 D G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current G TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -4 -3 -16 1.8 1.15 -55 to 150 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Typ 56 88 Max 70 110 Units V V A W °C Units °C/W °C/W Rev 0 : June 2012 .aosmd.

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