Datasheet Details
| Part number | AON6276 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 303.63 KB |
| Description | 80V N-Channel MOSFET |
| Download | AON6276 Download (PDF) |
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Overview: AON6276 80V N-Channel AlphaSGT TM General.
| Part number | AON6276 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 303.63 KB |
| Description | 80V N-Channel MOSFET |
| Download | AON6276 Download (PDF) |
|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 100A < 2.6mΩ < 3.5mΩ Applications • Secondary Synchronous Rectification MOSFET for Server and Telecom 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 Orderable Part Number AON6276 PIN1 Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Top View 18 27 36 45 Form Tape & Reel D G S Minimum Order Quantity 3000 Maximum 80 ±20 100 100 355 38.5 31 73 266 96 215 86 7.3 4.7 -55 to 150 Units V V A A A mJ V W W °C Typ 14 40 0.43 Max 17 50 0.58 Units °C/W °C/W °C/W Rev.1.0: October 2016 www.aosmd.com Page 1 of 6 AON6276 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=80V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rever
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