Datasheet Details
| Part number | AON6786 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 265.25 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6786 Download (PDF) |
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Overview: AON6786 30V N-Channel MOSFET SRFET TM General.
| Part number | AON6786 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 265.25 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6786 Download (PDF) |
|
|
|
Product Summary SRFETTM AON6786 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2.9mΩ < 3.9mΩ 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 85 66 240 22 17 40 80 83 33 2.5 1.6 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 42 Maximum Junction-to-Case Steady-State RθJC 1.1 Max 20 50 1.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1 : June 2011 www.aosmd.com Page 1 of 7 AON6786 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 0.5 mA 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.5 2 V ID(ON) On state drain current VGS=10V, VDS=5V 240 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 2.3 2.9 mΩ 3.6 4.5 VGS=4.5V, ID=20A 3 3.9 mΩ g
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