Datasheet Details
| Part number | AONS36306 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 330.80 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS36306-AlphaOmegaSemiconductors.pdf |
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Overview: AONS36306 30V N-Channel MOSFET General.
| Part number | AONS36306 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 330.80 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS36306-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 63A < 5.2mΩ < 8.6mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AONS36306 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike 10μs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 63 40 108 28 22.5 50 12.5 36 31 12.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 15 Maximum Junction-to-Ambient A D Steady-State RqJA 40 Maximum Junction-to-Case Steady-State RqJC 3.1 Max 20 50 4 Units °C/W °C/W °C/W Rev.1.2: December 2023 www.aosmd.com Page 1 of 6 AONS36306 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode For
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