Datasheet Details
| Part number | AONS36333 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 419.67 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS36333 Download (PDF) |
|
|
| Part number | AONS36333 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 419.67 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS36333 Download (PDF) |
|
|
|
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 79A < 3.4mΩ < 5.5mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note H 100% UIS Tested 100% Rg Tested DFN5x6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS36333 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 79 49 195 31 25 64 20 36 14 5.6 3.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 18 40 Maximum Junction-to-Case Steady-State RqJC 2.8 Max 22 55 3.5 Units °C/W °C/W °C/W Rev.1.0: August 2023 www.aosmd.com Page 1 of 6 AONS36333 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS
AONS36333 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AONS36303 | 30V N-Channel MOSFET |
| AONS36304 | 30V N-Channel MOSFET |
| AONS36306 | 30V N-Channel MOSFET |
| AONS36308 | 30V N-Channel MOSFET |
| AONS36312 | 30V N-Channel MOSFET |
| AONS36314 | 30V N-Channel MOSFET |
| AONS36316 | 30V N-Channel MOSFET |
| AONS36321 | 30V N-Channel MOSFET |
| AONS36344 | 30V N-Channel MOSFET |
| AONS36348 | 30V N-Channel MOSFET |