Datasheet Details
| Part number | AONS36344 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 408.98 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS36344 Download (PDF) |
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| Part number | AONS36344 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 408.98 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS36344 Download (PDF) |
|
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • DC/DC Converters in Computing, Servers, and POL 100% UIS Tested 100% Rg Tested 30V 83A < 3.28mΩ < 5.15mΩ DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS36344 Package Type DFN 5x6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.01mH C VDS Spike Power Dissipation B 10μs TC=25°C TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 83 52 205 33 26 64 20 36 36 14 5.6 3.6 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 18 40 Maximum Junction-to-Case Steady-State RqJC 2.8 Max 22 55 3.5 Units °C/W °C/W °C/W Rev.2.0: June 2019 www.aosmd.com Page 1 of 6 AONS36344 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYN
AONS36344 30V N-Channel MOSFET General.
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