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AOT1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
700V@150℃ 1.3A < 9W
Top View
TO-220
D
G D S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current
TC=25°C TC=100°C
ID
1.3 0.
AOT1N60 Datasheet
