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AOT430 - N-Channel MOSFET

Datasheet Summary

Description

The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 75V ID = 80 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) General.

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Datasheet preview – AOT430

Datasheet Details

Part number AOT430
Manufacturer Alpha & Omega Semiconductors
File Size 108.94 KB
Description N-Channel MOSFET
Datasheet download datasheet AOT430 Datasheet
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www.datasheet4u.com AOT430 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 75V ID = 80 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) General Description The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications).
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