Datasheet Details
| Part number | AOT8B65M3 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 584.95 KB |
| Description | 8A Alpha IGBT |
| Datasheet | AOT8B65M3-AlphaOmegaSemiconductors.pdf |
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Overview: AOT8B65M3 650V,8A Alpha IGBT TM With Soft and Fast Recovery Anti-Parallel Diode.
| Part number | AOT8B65M3 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 584.95 KB |
| Description | 8A Alpha IGBT |
| Datasheet | AOT8B65M3-AlphaOmegaSemiconductors.pdf |
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• Latest AlphaIGBT (αIGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor drives • Home appliance applications such as refrigerators and washing machines • Fan, pumps, vacuum cleaner • Other hard switching applications TO-220 Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 8A 2.05V C AOT8B65M3 E C G G E Orderable Part Number Package Type Form Minimum Order Quantity AOT8B65M3 TO220 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Tube AOT8B65M3 1000 Units Collector-Emitter Voltage VCE 650 V Gate-Emitter Voltage VGE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 16 A 8 Pulsed Collector Current, Limited by TJmax ICM 24 A Turn off SOA, VCE≤650V, Limited by TJmax ILM 24 A Continuous Diode Forward Current TC=25°C TC=100°C IF 10 A 5 Diode Pulsed Current, Limited by TJmax IFM 15 A Short Circuit Withstanding Time (1) VGE=15V, VCC≤400V, TJ≤175°C tSC 5 ms Power Dissipation TC=25°C TC=100°C PD 83 W 42 Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOT8B65M3 Units Maximum Junction-to-Ambient RqJA 65 Maximum IGBT Junction-to-Case RqJC 1.8 Maximum Diode Junction-to-Case RqJC 4.7 (1) Allowed number of short circuits: <1000;
time between short circuits: >1s.
°C/W °C/W °C/W Rev.2.1: May 2024 www.aosmd.com Page 1 of 9 AOT8B65M3 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVCES Collector-Emitter B
| Part Number | Description |
|---|---|
| AOT8N50 | 9A N-Channel MOSFET |
| AOT8N60 | 8A N-Channel MOSFET |
| AOT8N65 | 8A N-Channel MOSFET |
| AOT8N80L | 7.4A N-Channel MOSFET |
| AOT080A60L | 600V N-Channel Power Transistor |
| AOT095A60L | N-Channel Power Transistor |
| AOT10B60D | 10A IGBT |
| AOT10B65M1 | 10A Alpha IGBT |
| AOT10B65MQ2 | 10A AlphaIGBT |
| AOT10N60 | 10A N-Channel MOSFET |