Datasheet Details
| Part number | AOT8N80L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 396.52 KB |
| Description | 7.4A N-Channel MOSFET |
| Datasheet | AOT8N80L-AlphaOmegaSemiconductors.pdf |
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Overview: AOT8N80L/AOTF8N80 800V, 7.4A N-Channel MOSFET General.
| Part number | AOT8N80L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 396.52 KB |
| Description | 7.4A N-Channel MOSFET |
| Datasheet | AOT8N80L-AlphaOmegaSemiconductors.pdf |
|
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Product Summary The AOT8N80L & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 900V@150℃ 7.4A < 1.63W Top View TO-220 TO-220F D D G AOT8N80L S D G AOTF8N80 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt VDS VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT8N80L 800 ±30 7.4 4.6 26 3.8 217 433 5 245 2.0 -55 to 150 300 AOT8N80L 65 0.5 0.51 AOTF8N80 7.4* 4.6* 50 0.4 AOTF8N80 65 -2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev1.1: May 2024 www.aosmd.com Page 1 of 6 AOT8N80L/AOTF8N80 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C 800 900 V BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V 0.86 V/ oC IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Zero Gate Voltage Drain Current Gate-Body leakage
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