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AOTF13N50 Datasheet 13a N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 13A < 0.51W D G D S AOT13N50 G D S AOTF13N50 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT13N50 AOTF13N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 13 13* 8.5 8.5* 48 5.5 454 908 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT13N50 65 0.5 AOTF13N50 65 -- Maximum Junction-to-Case RqJC 0.5 2.5 * Drain current limited by maximum junction temperature.

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