Datasheet Details
| Part number | AOTF190A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 339.85 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOTF190A60L-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF190A60L 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOTF190A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 339.85 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOTF190A60L-AlphaOmegaSemiconductors.pdf |
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|
|
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220F 700V 80A < 0.19Ω 34nC 4.3mJ D AOTF190A60L DS G G S Orderable Part Number AOTF190A60L Package Type TO-220F Green Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL AOTF190A60L 600 ±20 ±30 20* 12* 80 5 12.5 410 100 20 32 0.25 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOTF190A60L 65 3.9 Units °C/W °C/W Rev.4.1: June 2018 www.aosmd.com Page 1 of 6 AOTF190A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF190A60L | N-Channel MOSFET | INCHANGE |
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