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AOTF280A60L - N-Channel Power Transistor

Description

Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC,Flyback and LLC topologies Micro inverter with DC/A

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AOTF280A60L/AOT280A60L/AOB280A60L 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F TO-263 D2PAK D 700V 56A < 0.28Ω 23.5nC 3.
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