Download the AOTF2910L datasheet PDF.
This datasheet also covers the AOT2910L variant, as both devices belong to the same 100v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
Note: The manufacturer provides a single datasheet file (AOT2910L_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AOTF2910L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AOTF2910L. For precise diagrams, and layout, please refer to the original PDF.
AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely o...
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AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 100V 30A / 22A < 24mW (* 23.5mW) < 33mW (* 32.
AOTF2910L Datasheet
