Download the AOTF2916L datasheet PDF.
This datasheet also covers the AOT2916L variant, as both devices belong to the same 100v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
Note: The manufacturer provides a single datasheet file (AOT2916L-AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AOTF2916L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AOTF2916L. For precise diagrams, and layout, please refer to the original PDF.
AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide ...
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L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 100V 23A / 17A < 34mW < 43.
AOTF2916L Datasheet
