Datasheet Details
| Part number | AOW410 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 276.42 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOW410 Download (PDF) |
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| Part number | AOW410 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 276.42 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOW410 Download (PDF) |
|
|
|
The AOW410 is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
TM Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS= 7V) 100V 150A < 6.5mΩ < 7.5mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G D S S D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case C Maximum 100 ±25 150 108 405 12 10 50 125 333 167 1.9 1.2 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS,IAR EAS,EAR PD PDSM TJ, TSTG A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 54 0.35 Max 15 65 0.45 Units °C/W °C/W °C/W Rev0: July 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOW410 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=7V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 5290 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 415 130 0.3 85 VGS=10V, VDS=50V, ID=20A 23 24 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 19 124 Conditions ID=250
AOW410 100V N-Channel MOSFET TM SDMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOW410 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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