Datasheet Details
| Part number | AOW418 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 276.96 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOW418 Download (PDF) |
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| Part number | AOW418 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 276.96 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOW418 Download (PDF) |
|
|
|
The AOW418 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 105A < 10mΩ < 12mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G D S S D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 100 ±25 105 82 280 9.5 7.5 60 180 333 167 2.1 1.3 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 11 47 0.36 Max 15 60 0.45 Units °C/W °C/W °C/W Rev0 : July 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOW418 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=7V, ID=20A VDS=5V, ID=20A 9.1 50 0.67 12 1 105 3460 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 265 78 0.2 55 VGS=10V, VDS=50V, ID=20A 16 13 VGS=
AOW418 100V N-Channel MOSFET SDMOS TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOW418 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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