Datasheet Details
| Part number | AOW482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 491.08 KB |
| Description | 80V N-Channel MOSFET |
| Download | AOW482 Download (PDF) |
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| Part number | AOW482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 491.08 KB |
| Description | 80V N-Channel MOSFET |
| Download | AOW482 Download (PDF) |
|
|
|
Product Summary The AOW482 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 80V 105A < 7.2mW < 9mW TO-262 Top View Bottom View D G DS G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±25 105 82 330 11 9 82 336 333 167 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 11 47 0.36 Max 15 60 0.45 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1.0: February 2024 www.aosmd.com Page 1 of 7 AOW482 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 V IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C 10 mA 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 2.5 3.1 3.7 V ID(ON) On state drain current VGS=10V, VDS=5V 330 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=7V, ID=20A TJ=125°C 5.9 7.2 mW 11 13 6.8 9 mW gFS Forward Transconductance VDS=5V, ID=20A 50 S
AOW482 80V N-Channel MOSFET SDMOS TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOW482 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOW480 | 80V N-Channel MOSFET |
| AOW410 | 100V N-Channel MOSFET |
| AOW418 | 100V N-Channel MOSFET |
| AOW4S60 | Power Transistor |
| AOW10N60 | 10A N-Channel MOSFET |
| AOW10N65 | 10A N-Channel MOSFET |
| AOW10T60 | 10A N-Channel MOSFET |
| AOW11N60 | 11A N-Channel MOSFET |
| AOW11S60 | Power Transistor |
| AOW11S65 | Power Transistor |