Datasheet Details
| Part number | AOWF600A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 436.67 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
 AOWF600A60 Datasheet
|
|
|
| Part number | AOWF600A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 436.67 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
AOWF600A60 Datasheet
|
|
|
|
Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power 100% UIS Tested 100% Rg Tested TO-262F Top View Bottom 700V 32A < 0.6Ω 11.5nC 1.8mJ D G DS AOWF600A60 G D S Orderable Part Number AOWF600A60 Package Type TO262F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
G S Form Tube Minimum Order Quantity 1000 Maximum 600 ±20 ±30 8* 5* 32 1.6 1.3 19 100 20 23 0.18 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Maximum 65 5.4 Units °C/W °C/W Rev.2.2: February 2024 www.aosmd.com Page 1 of 6 AOWF600A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage c
AOWF600A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part Number | Description |
|---|---|
| AOWF600A70 | N-Channel Power Transistor |
| AOWF600A70F | N-Channel Power Transistor |
| AOWF095A60 | 600V N-Channel Power Transistor |
| AOWF10N60 | 10A N-Channel MOSFET |
| AOWF10N65 | 10A N-Channel MOSFET |
| AOWF10T60 | 10A N-Channel MOSFET |
| AOWF11C60 | 11A N-Channel MOSFET |
| AOWF11S60 | Power Transistor |
| AOWF11S65 | Power Transistor |
| AOWF125A60 | N-Channel Power Transistor |