Datasheet Details
| Part number | AOWF600A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 468.93 KB |
| Description | N-Channel Power Transistor |
| Download | AOWF600A70 Download (PDF) |
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| Part number | AOWF600A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 468.93 KB |
| Description | N-Channel Power Transistor |
| Download | AOWF600A70 Download (PDF) |
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Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting.
100% UIS Tested 100% Rg Tested TO-262F D Top View Bottom 800V 34A < 0.6Ω 15.5nC 1.8mJ G DS AOWF600A70 Orderable Part Number AOWF600A70 DG S Package Type TO262F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C VGS ID IDM IAR EAR EAS dv/dt PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
G S Form Tube Minimum Order Quantity 1000 Maximum 700 ±20 ±30 8.5* 5* 34 2.1 2.2 19 100 20 25 0.2 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Maximum 65 5.0 Units °C/W °C/W Rev.1.1: December 2021 www.aosmd.com Page 1 of 6 AOWF600A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=700V, VGS=0V VDS=560V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Ga
AOWF600A70 700V, a MOS5 TM N-Channel Power Transistor General.
| Part Number | Description |
|---|---|
| AOWF600A70F | N-Channel Power Transistor |
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