Datasheet Details
| Part number | AOWF780A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 448.42 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
 AOWF780A70 Datasheet
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| Part number | AOWF780A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 448.42 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
AOWF780A70 Datasheet
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Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (Flyback, LLC) of Adapter, PC Silverbox,Server,Gaming Power Supply,Industrial, TV,Lighting 100% UIS Tested 100% Rg Tested TO-262F Top View Bottom View 800V 28A < 0.78Ω 11.5nC 1.4mJ D Orderable Part Number AOWF780A70 G DS G D S Package Type TO262F G S Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 700 ±20 ±30 7* 4.5* 28 1.7 1.5 11 100 20 23 0.2 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
Typical 55 4.4 Maximum 65 5.5 Units °C/W °C/W Rev.1.1: February 2024 www.aosmd.com Page 1 of 6 AOWF780A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=700V, VGS=0V VDS=560V, T
AOWF780A70 700V, a MOS5 TM N-Channel Power Transistor General.
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